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MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMSTA55/MMSTA56) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4)
A C
SOT-323 Dim A
BC
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8
B C D E G
M
B G
E
0.65 Nominal
Mechanical Data
* * Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMSTA05 Marking K1H, K1G (See Page 3) MMSTA06 Marking K1G (See Page 3) Order & Date Code Information: See Page 3 Weight: 0.006 grams (approximate)
K
H
H J K L M
J
* * * * * * * *
D
E
L
C
All Dimensions in mm
B
E
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG MMSTA05 60 60 MMSTA06 80 80 Unit V V V mA mW C/W C
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
4.0 500 200 625 -55 to +150
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol MMSTA05 MMSTA06 MMSTA05 MMSTA06 MMSTA05 MMSTA06 MMSTA05 MMSTA06 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES Min 60 80 60 80 4.0 Max 100 100 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz
hFE VCE(SAT) VBE(SAT) fT
100 100
0.25 1.2
V V MHz
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2
1 of 3 www.diodes.com
MMSTA05/MMSTA06
(c) Diodes Incorporated
200
10 ICBO, COLLECTOR-BASE CURRENT (nA)
0 25
PD, POWER DISSIPATION (mW)
150
1
100
0.1
50
0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs. Ambient Temperature
50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature
0.500 0.450 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.400 0.350 0.300
TA = 25C IC = 10 IB
0.01 25
2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01
IC = 1mA IC = 100mA IC = 10mA IC = 30mA
0.250 0.200 0.150 0.100 0.050
TA = -50C T A = 150C
0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 1
10,000
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs. Collector Current
VCE = 5V
hFE, DC CURRENT GAIN
1,000
100
10
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current
DS30168 Rev. 9 - 2
2 of 3 www.diodes.com
MMSTA05/MMSTA06
(c) Diodes Incorporated
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current
Ordering Information (Note 4 and 6)
Device MMSTA05-7-F MMSTA06-7-F
Notes:
Packaging SOT-323 SOT-323
Shipping 3000/Tape & Reel 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1x
K1x = Product Type Marking Code, ex: K1H = MMSTA05 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year 1998 Code Month Code J Jan 1
YM
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30168 Rev. 9 - 2
3 of 3 www.diodes.com
MMSTA05/MMSTA06
(c) Diodes Incorporated

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